features high surge current capability stud cathode and stud anode version wide current range typical applications semiconductor rohs rohs page 1 of 6 glass passivated standard recovery diodes n high power products ell voltage up to 1600v v rrm rohs compliant 85d(r)series (stud version), 85a battery charges converters power supplies machine tool controls product summary i f(av) 85a major ratings and characteristics parameter unit v v rrm i fsm i f(av) i t 2 t j a s 2 a a oc test conditions i f(rms) t c oc a 133 1700 595 14450 13170 -65 to 180 50 hz 60 hz 50 hz 60 hz range electrical specifications voltage ratings voltage type number code v ,maximum rrm repetitive peak reverse voltage v v ,maximum rsm non-repetitive peak voltage v v ,maximum rrm tj- =maximum tj ma 85d( r ) 02 04 06 08 10 12 16 200 400 600 800 1000 1200 1600 300 500 700 900 1100 1300 1700 9 glass passivated chips welder 02 to 12 16 110 140 110 -65 to 150 1600 200 to 1200 4.5 do-203ab(do-5) 85d(r) 85
semiconductor rohs rohs page 2 of 6 n high power products ell forward conduction parameter symbol unit test conditions maximum average forward current at case temperature i f(av) 180 conduction, half sine wave i f(rms) maximum rms forward current a oc 133 maximum peak, one-cycle forward, non-reptitive surge current i fsm t ms = 10 t ms = 8.3 t ms = 10 t ms = 8.3 t ms = 10 t ms = 8.3 t ms = 10 t ms = 8.3 no voltage reapplied 100%v rrm reapplied no voltage reapplied 100%v rrm reapplied i t 2 sinusoidal half wave, initial t = t maximum j j 1700 1800 1450 1500 14450 13170 10230 9340 a s 2 a a 144500 t = 0.1 to 10 ms, no voltage reapplied i t 2 maximum l2t for fusing maximum l2 t for fusing maximum forward voltage drop v fm 1.2 a s 2 v l = 267a, t = 25?c, t = 400s rectangular wave pk j p maximum junction operating and storage temperature range - 65 to180 oc 0.25 k/w maximum thermal resistace, junction to case maximum thermal resistance case to heatsink 0.35 15 0.53 (lbf in) n m maximum allowable mounting torque approximate weight case style do-203ab (do-5) t j r thjc r thcs (lbf in) n m g oz. mounting surface, smooth, flat and greased dc operation see dimensions - link at the end of datasheet r conduction thjc conduction angel sinusoidal conduction rectangular conduction units test conductions k/w 180? 120? 90 ? 60? 30? 0.10 0.11 0.13 0.17 0.26 0.08 0.11 0.13 0.17 0.26 t = t maximum j j ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles th an dc note 85d(r)series 02 to 12 16 140 110 1.4 forward conduction parameter symbol unit test conditions 02 to 12 16 - 65 to150 not lubricated thread ,tighting on nut (1) lubricated thread ,tighting on hexagon (2) lubricated thread ,tighting on nut (1) not lubricated thread ,tighting on hexagon (2) 3.4(30) 2.3(20) 4.2(37) 3.2(28) (+0% , -10%) note (1) recommended for pass-through holes. (2) recommended for holed threaded heatsinks. 85d(r) 85 85d(r)
semiconductor rohs rohs n high power products ell maximum allowable case temperature(?c) average forward current (a) average forward current (a) fig.1 current ratings characteristics fig.2 current ratings characteristics maximum allowable case temperature(?c) 85d(r)series maximum allowable case temperature(?c) average forward current (a) average forward current (a) fig.4 current ratings characteristics maximum allowable case temperature(?c) 0 100 20 140 120 60 40 80 0 80 20 120 140 100 40 60 180 170 130 140 150 160 30 60 90 120 180 100 110 120 130 140 150 dc 30 60 90 120 180 conduction period maximum average forward power loss (w) fig.5 forward power loss characteristics average forward current (a) maximum allowable ambient temperature (c) 40 100 rthsa k w delta r = 0.5 / - conduction angle 120 conduction angle 85 ( ) (200 1200 ) d r series v to v r (dc) = 0.35 k/w thjc 180 120 90 60 30 0 80 20 90 30 60 40 50 10 70 100 130 140 150 160 170 180 180 120 conduction angle 90 60 30 85 ( ) (1600 ) d r series v r (dc) = 0.35 k/w thjc 0 10 20 30 40 50 60 70 80 90 100 100 110 120 130 140 150 85 ( ) (200 1200 ) d r series v to v r (dc) = 0.35 k/w thjc fig.3 current ratings characteristics dc conduction period 85 ( ) (1600 ) d r series v r (dc) = 0.35 k/w thjc (200 1200 v to v) tj c = 180 85d(r) series rms limit 0 10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 80 70 90 20 60 80 140 160 180 0.7 / k w 1 k w / 1.5 / k w 2 / k w 5 / k w 3 / k w 10 / k w 180 120 90 60 30 page 3 of 6
semiconductor rohs rohs n high power products ell 85d(r)series maximum average forward power loss (w) fig.8 forward power loss characteristics average forward current (a) maximum allowable ambient temperature (c) maximum average forward power loss (w) fig.7 forward power loss characteristics average forward current (a) maximum allowable ambient temperature (c) maximum average forward power loss (w) fig.6 forward power loss characteristics average forward current (a) maximum allowable ambient temperature (c) dc 180 120 90 60 30 conduction period rms limit (200 1200 v to v) tj c = 180 85d(r) series rthsa k w delta r = 0.5 / - 0.7 / k w 1 / k w 1.5 / k w 2 / k w 3 / k w 5 / k w 10 / k w 0 20 40 60 120 80 100 140 20 40 60 80 120 100 140 160 180 0 20 40 60 80 100 120 180 120 90 60 30 rms limit conduction angle (1600 v) tj c = 150 85d(r) series rthsa k w delta r = 0.5 / - 0.7 / k w 1 / k w 1.5 / k w 2 / k w 3 / k w 5 / k w 10 / k w 50 0 20 10 30 40 60 70 90 80 100 0 10 20 30 40 50 60 70 80 90 25 50 75 100 125 150 conduction period (1600 v) tj c = 150 85d(r) series rthsa k w delta r = 0.5 / - 0.7 / k w 1 / k w 1.5 / k w 2 / k w 3 / k w 5 / k w 10 / k w dc 180 120 90 60 30 rms limit 0 20 40 60 80 100 120 140 0 40 20 60 80 100 120 140 25 50 100 75 125 150 page 4 of 6
semiconductor rohs rohs n high power products ell peak half sine wave forward current (a) peak half sine wave forward current (a) fig.9 maximum non-repetitive surge current fig.10 forward voltage drop characterisics fig.11 maximum non-repetitive surge current 1 10 100 1 2 5 number of equal amplitude half cycle current pulses(n) instantaneous forward voltage (v) pulse train duration (s) 85d(r)series 800 1000 400 600 10 100 1000 10000 3 4 1 10 100 1000 tj c = 25 tj tj max = 0.5 0 2.5 1.5 0 2 1 transient thermal impedance z (k/w) thjc fig.13 thermal impedance z characteristics thjc square wave pulse duration (s) steady state value r = 0.35 k/w thjc (up to 1200v) at any rated load condition and with rated v applied following surge rrm initial t = t max j j @ 60 hz 0.0083 s @ 50 hz 0.0100 s 85d(r) series 1200 1400 1600 85d(r) series up to 1200v 6 instantaneous forward current (a) maximum non repetitive surge current initial tj tj max = . no voltage reapplied rated vrrm reapplied versus pulse train duration . 85d(r) series 0.01 0.1 1 800 200 1000 1200 1400 400 1600 1800 600 85d(r) series tj c = 25 tj tj max = . instantaneous forward voltage (v) fig.12 forward voltage drop characterisics (for 1600v) instantaneous forward current (a) 85d(r) series (dc operation) 0.01 0.1 1 0.001 0.0001 10 10 1 0.1 0.01 0.001 page 5 of 6
semiconductor rohs rohs n high power products ell 85d(r)series ordering information table 1 - current rating: code = i f(av) 2 - d = standard recovery device 3 - none = stud normal polarity (cathode to stud) 4 r = stud reverse polarity (anode to stud) device code d m 85 r 12 1 2 3 4 5 5 - voltage code 100 = v (see voltage ratings table) rrm - none = stud base do-203ab (do-5) 1/4-28 unf-2a m = stud base do-230ab (do-5) m6 1.0 19(0.75) 17.3(0.68) 25.4(1.0) (0.37/0.4) 9.4/10.2 1/4 28unf-2a for metric devices: m6 1.0 11(0.43) (3.0(0.11)min (0.24/0.26) ?15(?0.6) 6.1/6.7 ?4.3(?01.7) (0.03/0.06) 0.9/1.5 page 6 of 6
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